Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-dope...
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI AG
2021-10-01
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| Series: | Micromachines |
| Assuntos: | |
| Acceso en liña: | https://www.mdpi.com/2072-666X/12/11/1296 |
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