Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices
The shortcomings with acceptors in p-type III-nitride semiconductors have resulted in not many efforts being presented on III-nitride based p-channel electronic devices (here, field effect transistors (FETs)). The polarization effects in III-nitride superlattices (SLs) lead to the periodic oscillati...
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| Auteurs principaux: | , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI AG
2022-05-01
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| Collection: | Crystals |
| Sujets: | |
| Accès en ligne: | https://www.mdpi.com/2073-4352/12/6/784 |
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