Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices

The shortcomings with acceptors in p-type III-nitride semiconductors have resulted in not many efforts being presented on III-nitride based p-channel electronic devices (here, field effect transistors (FETs)). The polarization effects in III-nitride superlattices (SLs) lead to the periodic oscillati...

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Bibliographic Details

Main Authors:	Athith Krishna, Aditya Raj, Nirupam Hatui, Stacia Keller, Umesh K. Mishra
Format:	Artigo
Language:	Inglês
Published:	MDPI AG 2022-05-01
Series:	Crystals
Subjects:	GaN acceptors superlattices
Online Access:	https://www.mdpi.com/2073-4352/12/6/784
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