Bandgap design of fabricated BN/ZnO/Al2O3/TiO2 doped graphene using XPS approach

This study investigates the use of BN/ZnO/Al2O3/TiO2 nanoparticles as dopants for Graphene nanoparticles. The sintering process was employed to manufacture semiconductor materials. The bandgap serves as the central feature of an atomic heterojunction, playing a crucial role in determining the charac...

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Detalles Bibliográficos

Principais autores:	Rajib Nandee, Mohammad Asaduzzaman Chowdhury, Md. Masud Rana, Nayem Hossain, Sagar Kumer Nondy
Formato:	Artigo
Idioma:	Inglês
Publicado:	Elsevier 2024-03-01
Series:	Applications in Engineering Science
Assuntos:	Graphene Semiconductor XPS Survey spectra Narrow spectra Bandgap
Acceso en liña:	http://www.sciencedirect.com/science/article/pii/S2666496823000419
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