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Lanthanide‐Doped Ga2O3: A Route to Bandgap Engineering for Ultraviolet Detection

Abstract The demand for next‐generation wide bandgap semiconductors is driven by applications such as solar‐blind ultraviolet detection and ultra‐high power electronics, and gallium oxide (Ga2O3) has emerged as a highly promising candidate material due to its ultra‐wide bandgap, high intrinsic break...

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Kaydedildi:
Asıl Yazarlar: Shunze Huang, Xuefang Lu, Yinlong Cheng, Jianzhong Xu, Xin Qian, Feng Huang, Richeng Lin
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Wiley-VCH 2025-08-01
Seri Bilgileri:Advanced Electronic Materials
Konular:
bandgap engineering
gallium oxide
lanthanide
photodetector
wide bandgap semiconductor
Online Erişim:https://doi.org/10.1002/aelm.202500030
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