Lanthanide‐Doped Ga2O3: A Route to Bandgap Engineering for Ultraviolet Detection
Abstract The demand for next‐generation wide bandgap semiconductors is driven by applications such as solar‐blind ultraviolet detection and ultra‐high power electronics, and gallium oxide (Ga2O3) has emerged as a highly promising candidate material due to its ultra‐wide bandgap, high intrinsic break...
Guardat en:
| Autors principals: | , , , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley-VCH
2025-08-01
|
| Col·lecció: | Advanced Electronic Materials |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1002/aelm.202500030 |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|