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Bandgap design of fabricated BN/ZnO/Al2O3/TiO2 doped graphene using XPS approach

This study investigates the use of BN/ZnO/Al2O3/TiO2 nanoparticles as dopants for Graphene nanoparticles. The sintering process was employed to manufacture semiconductor materials. The bandgap serves as the central feature of an atomic heterojunction, playing a crucial role in determining the charac...

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Autori principali: Rajib Nandee, Mohammad Asaduzzaman Chowdhury, Md. Masud Rana, Nayem Hossain, Sagar Kumer Nondy
Natura: Artigo
Lingua:Inglês
Pubblicazione: Elsevier 2024-03-01
Serie:Applications in Engineering Science
Soggetti:
Graphene
Semiconductor
XPS
Survey spectra
Narrow spectra
Bandgap
Accesso online:http://www.sciencedirect.com/science/article/pii/S2666496823000419
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