Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm

With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electron...

ver descrição completa

Detalhes bibliográficos

Principais autores:	Hewei Zhang, Yang Tian, Qian Li, Wenqiang Ding, Xuzhen Yu, Zebiao Lin, Xuyang Feng, Yanli Zhao
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2022-10-01
coleção:	Sensors
Assuntos:	InGaAs/Si avalanche photodiodes F-P resonant cavity photon trapping
Acesso em linha:	https://www.mdpi.com/1424-8220/22/20/7724
Tags:	Adicionar Tag Sem tags, seja o primeiro a adicionar uma tag!