Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm
With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electron...
Збережено в:
| Автори: | , , , , , , , |
|---|---|
| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2022-10-01
|
| Серія: | Sensors |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/1424-8220/22/20/7724 |
| Теги: |
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|