Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics
Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs) for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated SiO2/AlGaN/GaN MOSHFETs (metal-oxide-semicondutor H...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
VSB-Technical University of Ostrava
2005-01-01
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| Colecção: | Advances in Electrical and Electronic Engineering |
| Assuntos: | |
| Acesso em linha: | http://advances.utc.sk/index.php/AEEE/article/view/490 |
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