Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection

Hydrogen gas sensing is critical for energy storage, industrial safety, and environmental monitoring. However, traditional sensors still face challenges in selectivity, sensitivity, and stability. This work introduces an innovative N-polar GaN/AlGaN high-electron-mobility transistor (HEMT) with a 10...

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Autors principals:	Long Ge, Haineng Bai, Yidi Teng, Xifeng Yang
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2025-06-01
Col·lecció:	Crystals
Matèries:	N-polar GaN/AlGaN high-electron-mobility transistor H<sub>2</sub> sensor
Accés en línia:	https://www.mdpi.com/2073-4352/15/6/578
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