Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics

Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs) for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated SiO2/AlGaN/GaN MOSHFETs (metal-oxide-semicondutor H...

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Autors principals:	Peter Kordos, Jan Bernat, Gero Heidelberger, Michel Marso
Format:	Artigo
Idioma:	Inglês
Publicat:	VSB-Technical University of Ostrava 2005-01-01
Col·lecció:	Advances in Electrical and Electronic Engineering
Matèries:	transistors hfet frequency power sio2.
Accés en línia:	http://advances.utc.sk/index.php/AEEE/article/view/490
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