Time-Variant Reliability Optimization for Stress Balance in Press-Pack Insulated Gate Bipolar Transistors

Stress imbalance significantly affects the performance of a press-pack insulated gate bipolar transistor (IGBT). Time-variant loads and conditions lead to the stress fluctuations, exacerbating the impacts. The conventional reliability optimization faces efficiency barriers due to the nested time-var...

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Autori principali:	Hangyang Li, Tongguang Yang, Xinglin Liu, Jingyi Zhong, Jiaxin Mo, Han Zhou, Zhongkun Xiao
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	IEEE 2023-01-01
Serie:	IEEE Access
Soggetti:	Decoupling algorithm insulated gate bipolar transistor stress balance time-variant reliability optimization
Accesso online:	https://ieeexplore.ieee.org/document/10244169/
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