Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y₂O₃ Random-Access Memory

Herein, sol–gel-processed Y₂O₃ resistive random-access memory (RRAM) devices were fabricated. The top electrodes (TEs), such as Ag or Cu, affect the electrical characteristics of the Y₂O₃ RRAM devices. The oxidation process, mobile ion migration speed, and...

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Detalhes bibliográficos

Principais autores:	Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2024-03-01
Colecção:	Nanomaterials
Assuntos:	sol–gel Y<sub>2</sub>O<sub>3</sub> RRAM CBRAM top electrodes
Acesso em linha:	https://www.mdpi.com/2079-4991/14/6/532
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