Advances in ultrashallow doping of silicon
Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolaye...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Taylor & Francis Group
2021-01-01
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| Serie: | Advances in Physics: X |
| Soggetti: | |
| Accesso online: | http://dx.doi.org/10.1080/23746149.2020.1871407 |
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