Advances in ultrashallow doping of silicon
Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolaye...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Taylor & Francis Group
2021-01-01
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| Col·lecció: | Advances in Physics: X |
| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.1080/23746149.2020.1871407 |
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