Advances in ultrashallow doping of silicon

Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolaye...

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Bibliografiske detaljer

Principais autores:	Chufan Zhang, Shannan Chang, Yaping Dan
Format:	Artigo
Sprog:	Inglês
Udgivet:	Taylor & Francis Group 2021-01-01
Serier:	Advances in Physics: X
Fag:	ultrashallow junctions molecular monolayer doping molecular beam epitaxy ion implantation sub-second thermal annealing
Online adgang:	http://dx.doi.org/10.1080/23746149.2020.1871407
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