Micro- and Nanotechnology of Wide Bandgap Semiconductors

Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures...

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Detalhes bibliográficos
Corporate Authors: Piotrowska, Anna B., Kamińska, Eliana, Wojtasiak, Wojciech
Formato: Livro
Idioma:Inglês
Publicado em: MDPI - Multidisciplinary Digital Publishing Institute 2021
Assuntos:
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
GaN HEMT
self-heating effect
microwave power amplifier
thermal impedance
thermal time constant
thermal equivalent circuit
GaN
crystal growth
ammonothermal method
HVPE
ion implantation
gallium nitride
thermodynamics
ultra-high-pressure annealing
diffusion
diffusion coefficients
molecular beam epitaxy
nitrides
laser diode
tunnel junction
LTE
AlN
AlGaN/GaN
interface state density
conductance-frequency
MISHEMT
gallium nitride nanowires
polarity
Kelvin probe force microscopy
selective area growth
selective epitaxy
AlGaN/GaN heterostructures
edge effects
effective diffusion length
MOVPE
nanowires
AlGaN
LEDs
growth polarity
n/a
Acesso em linha:https://directory.doabooks.org/handle/20.500.12854/77105
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