The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O(2)/He Plasmas for Thermopile Devices

por Zhou, Na, Li, Junjie, Mao, Haiyang, Liu, Hao, Liu, Jinbiao, Gao, Jianfeng, Xiang, Jinjuan, Hu, Yanpeng, Shi, Meng, Ju, Jiaxin, Lei, Yuxiao, Yang, Tao, Li, Junfeng, Wang, Wenwu
Publicado en Materials (Basel) (2020)

Miniaturization of CMOS

por Radamson, Henry H., He, Xiaobin, Zhang, Qingzhu, Liu, Jinbiao, Cui, Hushan, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Gao, Jianfeng, Yang, Hong, Gu, Shihai, Zhao, Xuewei, Du, Yong, Yu, Jiahan, Wang, Guilei
Publicado en Micromachines (Basel) (2019)

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

por Zhang, Qingzhu, Gu, Jie, Xu, Renren, Cao, Lei, Li, Junjie, Wu, Zhenhua, Wang, Guilei, Yao, Jiaxin, Zhang, Zhaohao, Xiang, Jinjuan, He, Xiaobin, Kong, Zhenzhen, Yang, Hong, Tian, Jiajia, Xu, Gaobo, Mao, Shujuan, Radamson, Henry H., Yin, Huaxiang, Luo, Jun
Publicado en Nanomaterials (Basel) (2021)

State of the Art and Future Perspectives in Advanced CMOS Technology

por Radamson, Henry H., Zhu, Huilong, Wu, Zhenhua, He, Xiaobin, Lin, Hongxiao, Liu, Jinbiao, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Cui, Hushan, Gao, Jianfeng, Yang, Hong, Du, Yong, Xu, Buqing, Li, Ben, Zhao, Xuewei, Yu, Jiahan, Dong, Yan, Wang, Guilei
Publicado en Nanomaterials (Basel) (2020)

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

por Li, Junjie, Li, Yongliang, Zhou, Na, Wang, Guilei, Zhang, Qingzhu, Du, Anyan, Zhang, Yongkui, Gao, Jianfeng, Kong, Zhenzhen, Lin, Hongxiao, Xiang, Jinjuan, Li, Chen, Yin, Xiaogen, Li, Yangyang, Wang, Xiaolei, Yang, Hong, Ma, Xueli, Han, Jianghao, Zhang, Jing, Hu, Tairan, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Wang, Wenwu, Radamson, Henry H.
Publicado en Materials (Basel) (2020)

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

por Li, Junjie, Li, Yongliang, Zhou, Na, Xiong, Wenjuan, Wang, Guilei, Zhang, Qingzhu, Du, Anyan, Gao, Jianfeng, Kong, Zhenzhen, Lin, Hongxiao, Xiang, Jinjuan, Li, Chen, Yin, Xiaogen, Wang, Xiaolei, Yang, Hong, Ma, Xueli, Han, Jianghao, Zhang, Jing, Hu, Tairan, Cao, Zhe, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Luo, Jun, Wang, Wenwu, Radamson, Henry H.
Publicado en Nanomaterials (Basel) (2020)