A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping

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Được phát hành 2009

A Novel Method to Fabricate Silicon Nanowire <it>p</it>&#8211;<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping

Bằng K&#246;gler Reinhard, Skorupa Wolfgang, Kanungo PratyushDas, Werner Peter, G&#246;sele Ulrich
Được phát hành 2009-01-01

Room-temperature short-wavelength infrared Si photodetector

Bằng Berencén, Yonder, Prucnal, Slawomir, Liu, Fang, Skorupa, Ilona, Hübner, René, Rebohle, Lars, Zhou, Shengqiang, Schneider, Harald, Helm, Manfred, Skorupa, Wolfgang
Xuất bản năm Sci Rep (2017)

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

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Xuất bản năm Sci Rep (2016)

On the insulator-to-metal transition in titanium-implanted silicon

Bằng Liu, Fang, Wang, Mao, Berencén, Yonder, Prucnal, Slawomir, Engler, Martin, Hübner, René, Yuan, Ye, Heller, René, Böttger, Roman, Rebohle, Lars, Skorupa, Wolfgang, Helm, Manfred, Zhou, Shengqiang
Xuất bản năm Sci Rep (2018)

Controllable growth of vertically aligned graphene on C-face SiC

Bằng Liu, Yu, Chen, Lianlian, Hilliard, Donovan, Huang, Qing-song, Liu, Fang, Wang, Mao, Böttger, Roman, Hübner, René, N’Diaye, Alpha T., Arenholz, Elke, Heera, Viton, Skorupa, Wolfgang, Zhou, Shengqiang
Xuất bản năm Sci Rep (2016)

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

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