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A Novel Method to Fabricate Silicon Nanowire <it>p</it>–<it>n</it> Junctions by a Combination of Ion Implantation and in-situ Doping
<p>Abstract</p> <p>We demonstrate a novel method to fabricate an axial <it>p</it>–<it>n</it> junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ do...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
SpringerOpen
2009-01-01
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| Colecção: | Nanoscale Research Letters |
| Assuntos: | |
| Acesso em linha: | http://dx.doi.org/10.1007/s11671-009-9472-x |
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