RF performances of inductors integrated on localized p(+)-type porous silicon regions

Por Capelle, Marie, Billoué, Jérôme, Poveda, Patrick, Gautier, Gaël
Publicado em 2012

Non-oxidized porous silicon-based power AC switch peripheries

Por Menard, Samuel, Fèvre, Angélique, Valente, Damien, Billoué, Jérôme, Gautier, Gaël
Publicado em 2012

Copper-selective electrochemical filling of macropore arrays for through-silicon via applications

Por Defforge, Thomas, Billoué, Jérôme, Diatta, Marianne, Tran-Van, François, Gautier, Gaël
Publicado em 2012

Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces

Por Gautier, Gael, Cayrel, Frederic, Capelle, Marie, Billoué, Jérome, Song, Xi, Michaud, Jean-Francois
Publicado em 2012