Memristance effect of metal-insulator-metal structures using Al2O3 film as active layer for emergent memory devices
The memristor effect (cyclic switching from a High-Resistance State to a Low-Resistance State and viceversa) and a conductivity/resistivity window (I OFF /I ON ratio) of more than 4 orders of magnit ude have been obtained in Metal-Insulator- Metal (MIM) structures that use Al 2 O 3 as oxide layer af...
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| Pubblicato in: | Superficies y vacío |
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| Autori principali: | , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2014
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=94231175001 |
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