Electronic transitions in single and double quantum wells made of III–V compound semiconductors
In this work, we calculate the electronic inter-band transitions in low dimensional nanostructures employing the effective mass approximation. With the help of the well-known models of square quantum well (SQW) and the symmetric square double quantum well (DQW), we calculate the energy levels in nan...
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| Pubblicato in: | Superficies y vacío |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2013
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=94229972002 |
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