Study of InxGa1-xN layers growth on GaN/Al2O3 by MOCVD at different pressures
We present the InxGa1-xN layers growth in a metalorganic chemical vapor deposition (MOCVD) system. First, we growth a GaN epitaxial layer on sapphire substrate, trimethylgallium (TMGa) and ammonia (NH3) are precursors of gallium and nitrogen, respectively, and hydrogen (H2) is used as the carrier ga...
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| Veröffentlicht in: | Superficies y vacío |
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| Hauptverfasser: | , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2013
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| Schlagworte: | |
| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=94229715006 |
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