Analysis of threshold voltage fluctuations due to short channel and random doping effects

A two-dimensional (2-D) simulation study of short channel and random dopant effects on threshold voltage lowering and fluctuations in 90 nm MOSFET’s is presented. The systematic analysis of short channel and random dopant effects was carried out in 2-D on a scale to provide quantitative predictions....

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Bibliographic Details
Published in:Superficies y vacío
Main Authors: A. Jiménez, R. C. Ambrosio, J. Jr. Mireles, D. García, F. J. De la Hidalga
Format: Artigo
Language:Inglês
Published: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2013
Subjects:
Física, Astronomía y Matemáticas
MOSFET
D Simulations
Threshold Voltage
Short Channel Effects
Online Access:https://www.redalyc.org/articulo.oa?id=94227470001
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