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Analysis of threshold voltage fluctuations due to short channel and random doping effects
A two-dimensional (2-D) simulation study of short channel and random dopant effects on threshold voltage lowering and fluctuations in 90 nm MOSFET’s is presented. The systematic analysis of short channel and random dopant effects was carried out in 2-D on a scale to provide quantitative predictions....
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| Publicado no: | Superficies y vacío |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2013
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| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=94227470001 |
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