Photoluminescence in off-stoichiometric silicon oxide compounds

The photoluminescence properties of silicon rich oxide (SRO) and silicon oxynitride (SNO) films were studied. The materials were obtained by the low pressure chemical vapor deposition (LPCVD) technique, with some samples post-treated by Si-implantation and thermal annealing under different condition...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Superficies y vacío
Egile Nagusiak: C. Domínguez, A. Llobera, Z. Yu, M. Aceves, J. Carrillo, F. Flores, C. Falcony, A. Morales
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2004
Gaiak:
Física, Astronomía y Matemáticas
Si excess
Photoluminescence
Silicon rich oxide
Silicon oxynitride
Sarrera elektronikoa:https://www.redalyc.org/articulo.oa?id=94217101
Etiketak: Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!

Antzeko izenburuak