Photon energy shift in the luminescence of highly excited Ga1-xAlxAs:Si due to Auger effect involvement
A new bonding state in highly doped and almost compensated semiconductors, the {donor-acceptor1-acceptor2}-AUGER molecule, and its existence region is determined in silicon-doped Ga1-xAlxAs by electron-beam excitedluminescence measurements at low temperature. The main peak position and luminescence...
Tallennettuna:
| Julkaisussa: | Superficies y vacío |
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| Päätekijät: | , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2003
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| Aiheet: | |
| Linkit: | https://www.redalyc.org/articulo.oa?id=94216408 |
| Tagit: |
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