Photon energy shift in the luminescence of highly excited Ga1-xAlxAs:Si due to Auger effect involvement
A new bonding state in highly doped and almost compensated semiconductors, the {donor-acceptor1-acceptor2}-AUGER molecule, and its existence region is determined in silicon-doped Ga1-xAlxAs by electron-beam excitedluminescence measurements at low temperature. The main peak position and luminescence...
Saved in:
| Published in: | Superficies y vacío |
|---|---|
| Main Authors: | , |
| Format: | Artigo |
| Language: | Inglês |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2003
|
| Subjects: | |
| Online Access: | https://www.redalyc.org/articulo.oa?id=94216408 |
| Tags: |
No Tags, Be the first to tag this record!
|