The effect of carrier diffusion and recombination in semiconductors on the photoacoustic signal
A quantitative derivation is presented for the heat transport in bipolar semiconductors, taking into account generation andheating of carriers on the surface due to an incident modulated laser beam on the surface and finite carrier diffusion andrecombination in the solid. The temperature distributio...
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| Publicat a: | Superficies y vacío |
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| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2000
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=94201111 |
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