Electrical transport phenomena in nanostructured porous-silicon films
The charge transport mechanisms in nanostructured porous silicon (PS) films were studied through current-voltage (I-V) measurements of planar Au/PS/Au structures in dark conditions at 300 K. The films were formed by electrochemical etching of 1 − 5 Ω-cm p-type Si (100) wafers producing PS layers of...
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| Publié dans: | Revista Mexicana de Física |
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| Auteurs principaux: | , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Sociedad Mexicana de Física A.C.
2018
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| Sujets: | |
| Accès en ligne: | https://www.redalyc.org/articulo.oa?id=57082916003 |
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