Electrical transport phenomena in nanostructured porous-silicon films

The charge transport mechanisms in nanostructured porous silicon (PS) films were studied through current-voltage (I-V) measurements of planar Au/PS/Au structures in dark conditions at 300 K. The films were formed by electrochemical etching of 1 − 5 Ω-cm p-type Si (100) wafers producing PS layers of...

Täydet tiedot

Bibliografiset tiedot

Julkaisussa:	Revista Mexicana de Física
Päätekijät:	M. A. Vasquez, G. Romero-Paredes, R. Pena-Sierra
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Sociedad Mexicana de Física A.C. 2018
Aiheet:	Física, Astronomía y Matemáticas
Linkit:	https://www.redalyc.org/articulo.oa?id=57082916003
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