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Short thermal annealing for crystallization of plasma-CVD amorphous silicon films
The possibility of obtaining acceptable crystallization time and high-quality poly-Si by using PECVD depositedamorphous silicon films with silane has been explored. The film structure has been investigated by x-ray diffraction andRaman spectroscopy as a function of annealing temperature. For samples...
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| Publicado no: | Superficies y vacío |
|---|---|
| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Espanhol |
| Publicado em: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2000
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| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=94201003 |
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