Ultra Thin Depleted Silicon On Insulator MOSFET: a simulation based on COMSOL Multiphysics
We use the MOS transistor model from COMSOL [1] as a template to develop our own UT-FD-SOI-MOSFET with an ultra thin geometry(Channel thickness = 10nm). SOIMOSFETs are used to reduce short channel effect problems in actual MOSFET structures and to enable further miniaturization. Our model shows a li...
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| Pubblicato in: | Avances en Ciencias e Ingenierías |
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| Autori principali: | , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Universidad San Francisco de Quito
2012
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| Accesso online: | https://www.redalyc.org/articulo.oa?id=726180827013 |
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