Determination of the barrier height of P t − Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy
By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive P t − Ir tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0.58 − 0.64 eV. The ideality factors were in the range of...
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| Publicado en: | Revista Mexicana de Física |
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| Autores principales: | , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sociedad Mexicana de Física A.C.
2018
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| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=57082916017 |
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