Influence of the carrier gas in the growth kinetics of TiO2 films deposited by aerosol assisted chemical vapor deposition with titanium-diisopropoxide as precursor
Titanium dioxide thin films were deposited on crystalline silicon (100) substrates by delivering a liquid aerosol of titanium-diisopropoxideand by using oxygen and nitrogen as carrier gases. The crystalline and morphological features indicate that the films are deposited by ametal organic chemical v...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Revista Mexicana de Física |
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| Prif Awduron: | , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Sociedad Mexicana de Física A.C.
2006
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| Pynciau: | |
| Mynediad Ar-lein: | https://www.redalyc.org/articulo.oa?id=57065312 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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