InAs quantum dots grown on GaAs (100) surfaces subjected to novel in-situ treatments
Novel in-situ treatments were performed to GaAs(100) surfaces in order to improve the size homogeneity of self-assembled InAs quantumdots (QDs). The treatments consisted in exposing the GaAs surfaces at high temperature for 10 seconds with the As4- shutter closed. In thefirst experiment, the GaAs su...
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| Vydáno v: | Revista Mexicana de Física |
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| Hlavní autor: | |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedad Mexicana de Física A.C.
2005
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=57063902 https://www.redalyc.org/journal/570/57063902/ https://www.redalyc.org/journal/570/57063902/html/ https://www.redalyc.org/journal/570/57063902/57063902.epub https://www.redalyc.org/journal/570/57063902/movil |
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