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Photovoltage and J-V features of porous silicon

In this paper we present a systematic study into the influenc of the electrical, structural and optical properties of the porous silicon (PS) layers on the photovoltage and J - V responses of devices prepared from this semiconductor material. Electronic devices were prepared forming a p- or n-type P...

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Publicat a:Revista Mexicana de Física
Autors principals: MC. Arenas, Hailin Hu, J. Antonio del Río, Oscar H. Salinas
Format: Artigo
Idioma:Inglês
Publicat: Sociedad Mexicana de Física A.C. 2008
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Accés en línia:https://www.redalyc.org/articulo.oa?id=57054509
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