Photovoltage and J-V features of porous silicon
In this paper we present a systematic study into the influenc of the electrical, structural and optical properties of the porous silicon (PS) layers on the photovoltage and J - V responses of devices prepared from this semiconductor material. Electronic devices were prepared forming a p- or n-type P...
保存先:
| 出版年: | Revista Mexicana de Física |
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| 主要な著者: | , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Sociedad Mexicana de Física A.C.
2008
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| 主題: | |
| オンライン・アクセス: | https://www.redalyc.org/articulo.oa?id=57054509 |
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