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Phase Transition induced by high pressure in AgInSe2

Structural tracking of a AgInSe2semiconductor under pressure is shown in this work. The diffractograms were taken on the DW11LUREStation, Orsay France by x rays diffraction techniques coming from a synchrotron. The deconvolution of the diffraction maximales were madewith the program EDX, and the ce...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Revista Mexicana de Física
Prif Awduron: L.M. de Chalbaud, M. Díaz de Sihues
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Sociedad Mexicana de Física A.C. 2007
Pynciau:
Mynediad Ar-lein:https://www.redalyc.org/articulo.oa?id=57036163073
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