Phase Transition induced by high pressure in AgInSe2
Structural tracking of a AgInSe2semiconductor under pressure is shown in this work. The diffractograms were taken on the DW11LUREStation, Orsay France by x rays diffraction techniques coming from a synchrotron. The deconvolution of the diffraction maximales were madewith the program EDX, and the ce...
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| Vydáno v: | Revista Mexicana de Física |
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| Hlavní autoři: | , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedad Mexicana de Física A.C.
2007
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=57036163073 |
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