Ab-initio and tight-binding studies of porous Si and Ge
First-principles and semi-empirical methods are employed to calculate electronic and optical properties of porous silicon and porous germanium. In order to test the parameters used in this work, the crystalline case has been taken as a starting point, where the sp3 s ∗ tight-binding and the density...
Guardat en:
| Publicat a: | Revista Mexicana de Física |
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| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Física A.C.
2007
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=57036163053 |
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