Dependencia con la temperatura de los fonones activos en Raman del compuesto TlGaS2
The isobaric temperature dependence of the Raman active phonons of layer TlGaS2 compound was studied in the temperature range from 26 K to 300 K, approximately. The results showed that for the internal modes of material the anharmonic contributions to the phonon decay is higher than the correspondin...
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| Veröffentlicht in: | Revista Mexicana de Física |
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| Hauptverfasser: | , , , |
| Format: | Artigo |
| Sprache: | Espanhol |
| Veröffentlicht: |
Sociedad Mexicana de Física A.C.
2006
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| Schlagworte: | |
| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=57020393049 |
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