Effect of pressure on the electrical properties of GaSe/InSe heterocontacts
Barrier structures were produced using optical contact between the indium and gallium selenides. The effect of mechanical pressure ranging from 0 to 100 kPa on the electrical properties of the GaSe/InSe heterocontacts was investigated. The data was analyzed assuming the SIS (semiconductor - insulato...
保存先:
| 出版年: | Revista Mexicana de Física |
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| 第一著者: | |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Sociedad Mexicana de Física A.C.
2010
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| 主題: | |
| オンライン･アクセス: | https://www.redalyc.org/articulo.oa?id=57019194002 |
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