First Principles Calculations of As Impurities in the Presence of a 90o Partial Dislocation in Si
We investigated the interaction of As impurities with a 90o partial dislocation in Si. The calculations showthat As atoms segregate to the dislocation core. The most stable site for the As atom is at the stacking faultside, which is favorable by 0.26 eV as compared to an As atom in a crystalline pos...
שמור ב:
| הוצא לאור ב: | Brazilian Journal of Physics |
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| Principais autores: | , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Sociedade Brasileira de Física
2006
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| נושאים: | |
| גישה מקוונת: | https://www.redalyc.org/articulo.oa?id=46436307 |
| תגים: |
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