Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model
Ensemble Monte Carlo simulations have been carried out to investigate the effects of upper valleys on the characteristics of wurtzite GaN MESFETs. Electronic states within the conduction band valleys at the Γ1, U, M, Γ3 and K are represented by non-parabolic ellipsoidal valleys centred on...
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| Pubblicato in: | Brazilian Journal of Physics |
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| Autori principali: | , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedade Brasileira de Física
2010
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=46415798002 |
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