Phenomenological Model for the metal-insulator transition in two dimensions
The resistivity measured in two-dimensional MOSFET geometry is modeled by considering that the resistivity is a function of the temperature and the areal density of charges (electrons or holes). The logistics differential equation is proposed for the behaviour of the resistivity as a function of tem...
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| Veröffentlicht in: | Brazilian Journal of Physics |
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| 1. Verfasser: | |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Sociedade Brasileira de Física
2009
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| Schlagworte: | |
| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=46413564017 |
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