Phenomenological Model for the metal-insulator transition in two dimensions
The resistivity measured in two-dimensional MOSFET geometry is modeled by considering that the resistivity is a function of the temperature and the areal density of charges (electrons or holes). The logistics differential equation is proposed for the behaviour of the resistivity as a function of tem...
Kaydedildi:
| Yayımlandı: | Brazilian Journal of Physics |
|---|---|
| Yazar: | |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Sociedade Brasileira de Física
2009
|
| Konular: | |
| Online Erişim: | https://www.redalyc.org/articulo.oa?id=46413564017 |
| Etiketler: |
Etiket eklenmemiş, İlk siz ekleyin!
|