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Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress
[Image: see text] Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobilit...
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| Publicado no: | Nano Lett |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Chemical Society
2021
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8289290/ https://ncbi.nlm.nih.gov/pubmed/33914543 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.nanolett.1c00353 |
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